As TSMC's Kumamoto fab kicks off operations, this marks the first time logic chips featuring FinFET transistors have been ...

Base dies made on TSMC's 12FFC+ process (derived from the company's established 16nm FinFET technology) will enable to build 12-Hi and 16-Hi HBM4 memory stacks that will offer capacities of 48 GB ...

Another highlight for TSMC's N2 nodes is that it will replace existing FinFET transistors and feature new gate-all-around (GAA) nanosheet transistors, allowing chip designers to adjust their ...

TSMC claims its N2 node outperforms FinFET technology at low supply voltages of 0.5V to 0.6V, providing a notable increase in performance per watt. These process and device optimisations boost ...

There are also additional benefits for TSMC to transition from the use of more traditional FinFET technology to its N2 NanoFlex nanosheet transistors. This includes being able to gain better ...

IGMSHDY01A is a synchronous ULVT / LVT periphery high density single port SRAM compiler. It is developed with TSMC 5 nm 0.75 V/1.2 V CMOS LOGIC FinFET Compact Process. Different combinations ...

Ceva, a licensor of silicon and software IP, has unveiled the Ceva-Waves Links200, a multi-protocol wireless platform.

As Tom’s Hardware points out, TSMC made great strides in improving the SRAM bit cell size when it moved from FinFET transistors to gate-all-around (GAA) transistors and backside power delivery ...

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TSMC has commenced mass production at its fab in Kumamoto, Japan, marking a significant milestone in advanced chip manufacturing for the country and the first step in its major expansion overseas ...

TSMC’s gate-all-around (GAA) technology is helping it deliver impressive results with its 2nm process. The chipmaker provided more details about its 2nm nanosheets at this week's IEEE ...