Abstract: A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon superjunction MOSFET during hard-switching operation. This model depends on ...
The 100V U-MOS11-H series improves on the drain-source On-resistance (R DS (ON) ), total gate charge (Q g) and the trade-off ...
Toshiba has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET fabricated with its latest-generation process, ...
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