Abstract: This paper reports on development of 850 GHz band receiver and transmitter front-ends using a new generation of 25 nm indium phosphide high electron mobility transistor engineered for high ...
Abstract: This paper presents a 40-Gb/s transmitter (TX) and receiver (RX) chipset for chip-to-chip communications in a 65-nm CMOS process. The TX implements a quarter-rate multi-multiplexer ...
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