Onsemi has signed a collaboration agreement with GlobalFoundries to develop and manufacture advanced GaN power products using ...
The Power SiC market continues its transformation. Following an unprecedented investment wave between 2019 and 2024, the ...
Forming a low-resistivity ohmic contact on p -type SiC is far from easy – it requires an electrode metal with a work function larger than that of p -type SiC. As that condition is rarely met, when ...
RENA Technologies will be a key industrial partner in a new €1.3 million UK government-funded project led by the National ...
One glaring issue accompanies 800V platform EVs: the majority of DC chargers in the world are 400V, meaning that there needs ...
III-V Lab, a joint industrial research lab between Nokia, Thales and CEA-Leti, will deliver three training sessions on ...
Fraunhofer IAF and the Max Planck Institute for Radio Astronomy have provided 145 high-performance low-noise amplifiers for ...
To prevent early breakdown through air when conducting three-terminal off-state breakdown-voltage measurements, the team used ...
Dublin-based CHIPX plans to establish an 8-inch GaN on SiC wafer fabrication facility in Malaysia. This initiative supports ...
Circuits Integrated, a Greek company pioneering chipsets and semiconductors for satellite communications and 5G, has chosen ...
The success of the team – a partnership between researchers at Peking University, the Songshan Lake Materials Laboratory in ...
French GaN company Wise Integration has signed a memorandum of understanding (MoU) with Korean power firms Powernet and KEC ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results