It was announced today that GaN (Gallium Nitride)-based e-Beam inspection and metrology for advanced semiconductor manufacturing, jointly developed by Nagoya University startup Photo electron Soul Inc ...
Applied’s new “cold field emission” technology works at room temperature, increasing nanoscale image resolution by up to 50% and imaging speed by up to 10X CFE eBeam technology enables leading ...
Abstract: A next generation system and methodology for high-throughput e-beam hot spot inspection is described. Rather than capturing images of each hot spot, just a single pixel centered on the ...
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