Key TakeawaysBerkeley Lab scientists showed a novel way to build advanced transistors decades before similar structures ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

Negative capacitance field-effect transistors (NCFETs) represent a transformative approach in the design of low-power electronic devices. By integrating ferroelectric materials into the gate structure ...

PARKESBURG, PA, UNITED STATES, September 20, 2025 /EINPresswire.com/ -- Inventor Announces Breakthrough Continuation Patent filed for Graphene-Based Interconnects - Introducing a New Era of IC ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

A technical paper titled “CFET Beyond 3 nm: SRAM Reliability under Design-Time and Run-Time Variability” was published by researchers at TU Munich and IIT Kanpur. Find the technical paper here. May ...

Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...

A research team has successfully developed the technology to fabricate high-sensitive biosensors by simply spraying, like an inkjet printer. The technology enables the fabrication of sensitive and ...

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If the claim is accurate, it would mean that China has bleeding-edge tech that could rival chips from Intel and TSMC. Share on Facebook (opens in a new window) Share on X (opens in a new window) Share ...