A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly ...
The purpose of this paper is to demonstrate a systematic approach to design high-performance bootstrap gate drive circuits for high-frequency, high-power, and high-efficiency switching applications ...
Analog Devices has created a stand-alone 100V half-bridge driver for GaN power hemts “with a propagation delay of 10ns and delay matching of 1.5ns between the top and bottom channels, making it ...
Motor applications are on the rise, and the dramatic reduction in the cost of power MOSFET devices over the last decade, particularly MOSFET gate-drive ICs for low voltage (less than 100 volts) ...
GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying ...
What is a two-phase gate driver IC? A two-phase gate driver IC is a power amplifier that produces two high-current gate drives for either a synchronous buck or half-bridge totem-pole MOSFET ...
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