A new technical paper, “Challenges and prospects of 2D electronics for future monolithic complementary field-effect ...
Aveni, a developer and manufacturer of wet deposition technologies and chemistries for 2D interconnects and 3D through silicon via packaging, has announced it has obtained results that support the ...
Electro-Migration (EM) is a critical problem for interconnect reliability of modern Integrated Circuits (ICs), especially as the feature size becomes smaller. In Three-Dimensional (3D) IC technology, ...
Figure 1. A model INL 8 layer metal network assembled from M1, M2, and M4 layers from a 32nm CMOS logic circuit. The INL is fabricated on a Si substrate by 32nm capable BEOL tool sets. The total ...
SAN FRANCISCO — ASM International N.V. and IMEC have agreed to enter into a three-year strategic partnership in the area of back-end-of-line (BEOL) interconnect technology starting in 2006. IMEC ...
Undaunted by the skyrocketing costs of new semiconductor fabs and the formidable hurdles facing the industry with each new technology node, leading IC manufacturers are continuing to strive for ...
Imec has developed an electrically functional solution for the 5nm back-end-of-line (BEOL). The solution is a full dual-damascene module in combination with multi-patterning and multi-blocking.
San Francisco, CA. Imec’s annual Technology Forum kicked off today in connection with SEMICON West with two announcements focused on how 2D materials can be used to scale FETs for very advanced ...
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